ABSTRACT
The objective of this chapter is to study lateral types of radio frequency microelectromechanical systems (RF MEMS) series switches. Lateral switches have attracted considerable attention as the strongest alternatives to the conventional vertically driven MEMS switches owing to their high broadband isolation and no dielectric charging properties. Lateral switches contact or release with the RF circuits by in-plane motion of the beam. These switches are mostly operated by electrostatic actuation because of their large actuation forces and suitability for high-volume wafer-scale standard manufacturing processes [1].
