ABSTRACT
Area-array imaging detectors are ubiquitous in our everyday lives and in science instrumentation. For imaging infrared, visible, and ultraviolet photons, the usual approach taken is to use focusing optics to concentrate the light onto a small imaging area and to use the smallest pixels possible to reduce the cost of the imaging detector. This is usually true in science experiments as well as commercial cameras. The modality for detecting x-rays is very different. In most cases, it is impossible to focus the x-rays, and large-area detectors are required. This is true for x-ray photon and particle detectors in applications from high-energy physics, space science, and synchrotron applications. Many applications can use large, flat panels 1 with deposited scintillators or scintillating screens. Amorphous silicon screens have been very successful in medical and security applications as well as science but do have limitations in speed and several other performance criteria. 2 Complementary metal–oxide semiconductor (CMOS) sensors have recently surpassed charge-coupled devices for many applications and can now be constructed at a wafer scale (see Figure 11.1). 3 Even with these wafer-scale sensors, there is a requirement to tile these to create larger arrays. Up to a certain size, this is relatively easy as the detectors can be three-side butted and connected to scintillator screens. The readout can be performed on one edge using conventional wire bonding, and the sensor area can be connected to a stable substrate that also allows cooling if required. The three-side, buttable LASSENA CMOS sensor designated at STFC 140 × 140 mm with 50-μm pixels mounted on a readout card. https://s3-euw1-ap-pe-df-pch-content-public-u.s3.eu-west-1.amazonaws.com/9781315214337/6c2d6d81-974c-44b7-b243-b74e4b0fdfe3/content/fig11_1.jpg"/>
