ABSTRACT
The drive toward smaller feature sizes in complementary metal-oxide semiconductor technology enables increased processing power and transistor density, while reducing the cost per transistor. Considerable effort has been devoted to the top-down creation of nanoscale devices, but feature sizes are ultimately limited by the capability of lithography and processing complexity. This is especially true as the dimensions of the channel are in the atomic scale. True integration of top-down and bottom-up processes provides an opportunity to leverage the paradigm of bottom-up fabrication which is complementary to positional alignment and system complexity afforded by top-down fabrication and assembly. This chapter is broadly divided into two separate sections discussing about the role of self-assembled monolayers (SAMs) in fabricating electronic devices and the role of nanowires grown on microelectromechanical system devices, especially zinc oxide (ZnO) nanowires on cantilevers, and using them for various sensing purposes.
