Radiation-hardened microprocessors for use in aerospace or other high-radiation environments [1] have historically lagged behind their commercial counterparts in performance. The RAD750 (BAE Systems Inc., Arlington, VA), released in 2001 on a 250-nm rad-hard process, can reach 133 MHz [2]. Recent updates of this device to a 150-nm process have improved on this, but only marginally [3]. This device, built on a radiation-hardened process, lags in part due to the difficulty in keeping such processes up to date, for relatively low-volume devices [4]. The SPARC AT697 (Atmel Corp., San Jose, CA) introduced in 2003 has an operating frequency of 66 MHz, uses triple modular redundancy (TMR) for logic, and error detection and correction (EDAC) and parity protection for memory, soft-error protection [5,6]. More recent radiation hardened by design (RHBD) processors have reached 125 MHz [7]. In contrast, unhardened embedded microprocessors contemporary to these designs achieve dramatically better performance on similar generation processes. For instance, the XScale microprocessor, fabricated on a 180-nm process, operates at clock frequencies over 733 MHz [8]. Ninety-nanometer versions of the XScale microprocessors achieved 1.2 GHz [9] with the cache performance being even higher [10]. More modern designs, such as those in 32-nm cell phone system on chip (SOC) devices, are multicore, out-of-order microprocessors, running at over 1.5 GHz [11]. As portable devices have become predominant, power dissipation has become the overriding concern in microprocessor design. The most effective means to achieving low power is clock gating, which limits circuit active power dissipation by disabling the clocks to sequential circuits such as memories. In caches and other memories, this means that the operation of clocking and timing circuits must also be protected from radiation-induced failures, including erroneously triggered operations.