The semiconductor industry is facing a period where the survival of mature technologies is being questioned. Short-channel effects, leakage, and variability are suited as insurmountable obstacles that standard metal–oxide–semiconductor field-effect transistor (MOSFET) would not be able to overcome in the ultimate nodes. In the case of the memory field, the situation is analogous. Mainstream technologies (Flash, static random-access memory [SRAM], dynamic random-access memory [DRAM]) are threatened by particular issues related to their scalability. 1 In parallel new emerging alternatives, that is, resistive random-access memory, magnetoresistive random-access memory, floating-body DRAMs (FB-DRAMs), and so on, are claiming to solve the issues of the established technologies.