Integrating Low-Temperature Carbon Nanotubes as Vertical Interconnects in Si Technology

Since their discovery, many applications have been proposed for vertically aligned carbon nanotubes (CNT). Some potential areas for the use of CNT are supercapacitors [1], microelectromechanical systems (MEMS) [2], and displays [3]. For these applications, the unique high-aspect-ratio (HAR) features of CNT and their large surface area compared to their volume can be exploited. One promising application within microelectronics that has received a lot of attention is the use of aligned CNT as vertical interconnects [4].