ABSTRACT
Next-generation electronic systems will need to adopt novel nano-electronic solutions to keep pace with Moore’s law. Nano-CMOS (complementary metal–oxide–semiconductor) technology is among the most promising of nanotechnologies. Although most new nano-electronic technologies are still in their infancy, however, they present the potential for unprecedented levels of integration, low-power computing, signal processing, information storage, and possibly higher operating frequency with cost-effective system solution [1,2]. Advanced MOSFET (metal–oxide–semiconductor field-effect transistor) structures show a promise for scaling CMOS technology to gate lengths below 10 nm to enable continued improvements in integrated circuit (IC) cost and performance (e.g., higher operating speed) for at least 10 more years. Over the past three decades, by reducing the transistor gate lengths with each new generation of manufacturing technology, steady improvements in circuit performance (speed) and cost per function have been reported [2]. However, continued transistor scaling will not be as straightforward in the future as it has been in the past because the fundamental materials and process limits are rapidly being approached.
